| 摘要 |
PURPOSE:To improve the dryetching resistance of a resist by irradiating a resist pattern formed in the lithographic process with ion. CONSTITUTION:A resist 12 pattern-formed on a semiconductor substrate 1 is irradiated with ion using an electron beam lithography to modify the surface thereof 12 and then the semiconductor substrate 1 is dryetched using the resist 12 as a mask. At this time, an electron beam resist in low dryetching resistance is applied for the resist 12. Besides, either one of H2, N2 inert gas or Si, metallic ion is applied for irradiation while low acceleration voltage of 10-40 kV is applied for the acceleration voltage during the ion irradiation process. Thus, the dryetching resistance of resist can be improved. |
