| 摘要 |
PURPOSE:To obtain the titled resist suitable for the large scale integrated circuit of for example a D-RAM semiconductor having larger than 64 megabits by comprising a monodispersive copolymer composed from two or more kinds of specific monomer groups or the monodispersive copolymer of said monomer and a alpha-cyanoacrylate, as a main component. CONSTITUTION:The titled resist comprises the monodispersive homopolymer of the monomer shown by formula I or the monodispersive copolymer obtd. by polymerizing two or more kinds of said monomer groups or the monodispersive copolymer of said monomer and a monomer shown by formula II. In formulas I and II, R1 and R2 are each alkyl or a halogenated alkyl group, R3 is alkyl, alkenyl or a halogenated alkyl group. Thus, the excellent resist having the very high practical resolution of <=0.3mum line width is obtd., and the titled resist is available to the large scale integrated circuit of a D-RAM semiconductor having larger than 64 megabits. |
