| 摘要 |
PURPOSE:To reduce the influence of a proximity effect easily and facilitate improvement of lithography accuracy without requiring a complicated computer processing or the like by a method wherein a beam irradiation period, a beam intensity and the like are so predetermined as to expose the part of resist to which the beam is applied to a thermal decomposition temperature for longer than a cartain time by a heat created at the time of the beam irradiation. CONSTITUTION:In a charged beam lithography method wherein a charged beam is direct to resist applied to a specimen to lithograph a required pattern on the resist, a beam irradiation period and a beam intensity are so predetermined as to expose the part of the resist to which the beam is applied to a thermal decomposition temperature for longer than a certain time by a heat created at the time of the beam irradiation. Further, for instance, if the minimum pattern dimension of regions 1-3 to which the electron beam is directed is 0.5 mum, the lithography patterns are divided into a number of small rectangles 4 and each rectangle 4 is defined as a region (shot) to which one variable forming beam is directed. The size of the shot is limited within 0.2 mum.square-0.3 mum.square with 0.25 mum.square which is smaller than 0.5 mum as a reference.
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