| 摘要 |
PURPOSE:To improve the uniformity of the quantity of ions to be implanted and the depth of implantation by using a 1st conductive or semiconductive mask layer covering the entire surface of an insulated magnetic film and a 2nd conductive or semiconductive mask layer having a desired pattern form to produce a mask layer against the ion implantation. CONSTITUTION:A 1st mask layer 3 of a semiconductor material Si is formed over the entire surface of a magnetic bubble film 2 of (YSmLuGd)3(FeGa)5O12 formed on a substrate wafer 1. Then a 2nd mask layer 4 made of a conductive material Au in a desired pattern is formed on the surface of the layer 3. Ions 5 for a drive layer of magnetic bubbles are implanted into the layer 4 for production of an ion implantation layer 6. Thus it is possible to prevent the electrification due to the storage of the electric charge of the layer 4 and the film 2 when an ion implantation transfer path is formed for the film 2. In such a way, the ion injection can be performed with high uniformity.
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