| 摘要 |
PURPOSE:To obtain a sufficient reinforcing effect even if an aspect ratio is larger than one by a method wherein reinforcing layers composed of TiN films or Al-Si alloy films are provided on the side surfaces of wiring layers composed of aluminum thin films or aluminum alloy thin films. CONSTITUTION:Reinforcing layers 13 composed of titanium nitride films or aluminum-silicon alloy films are provided on the side surfaces of wiring layers 12 composed of aluminum thin films or aluminum alloy thin films. For instance, an Al thin film 11 with a thickness T about 1.5mum is formed on an insulating layer 10 made of PSG or the like and formed on a substrate such as a silicon wafer and subjected to such a treatment as to form wiring layers 12 with widths W 1.5mum or less. Then a TiN layer 13 with a thickness about 0.1mum is formed over the whole surface of the insulating layer 10 on which the wiring layers 12 are formed by radio frequency sputtering. Then the parts of the TiN layer 13 formed on the top surfaces of the wiring layers 12 and on the surfaces of the insulating layer 10 between the respective wiring layers 12 are selectively removed by reactive ion etching to form the TiN layers 13 on the side surfaces of the wiring layers 12 as the reinforcing layers.
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