| 摘要 |
PURPOSE:To facilitate forming conductive films on both the surface or a semiconductor substrate in one conductive film forming process by a method wherein a part of or a whole rear surface of the semiconductor substrate is kept apart from a conductive film forming apparatus when the conductive films are to be formed on the surfaces of the semiconductor substrate. CONSTITUTION:When a conductive film 2 for forming a bump 4 by a plating method is to be formed on a semiconductor substrate 1, the conductive film 2 is formed also on the rear surface of the semiconductor substrate 1 simultaneously by keeping a part of or the whole semiconductor substrate 1 apart from a conductive film forming apparatus 5. For instance, the semiconductor substrate 1 is placed on a holder 6 to keep a part of the semiconductor substrate 1 apart from the conductive film forming apparatus 5 and the conductive film 2 is formed. At that time, the conductive film 2 is formed also on the rear surface of the semiconductor substrate 1 kept apart from the conductive film forming apparatus 5 simultaneously. After that, a photoresist pattern 3 is formed and an electric contact 7 is provided on the rear surface of the semiconductor substrate 1 and the bump electrode 4 is formed by plating.
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