| 摘要 |
PURPOSE:To recover damaged parts created by physical etching satisfactorily without removing them by a method wherein the damaged parts in a 1st layer created when a 2nd layer is subjected to physical etching are recovered by a low temperature heat treatment. CONSTITUTION:When a semiconductor device is manufactured by a process wherein a 2nd layer 6 formed on a 1st layer 1 is etched physically to form apertures 4 and 5, the damaged parts 17 and 18 in the 1st layer 1 created by the physical etching are recovered by a low temperature heat treatment. For instance, in order to manufacture an n-type MOS FET, when plasma etching is carried out with photoresist 14 as a mask to form contact holes 4 and 5 in the SiO2 layer 6, the damaged parts 17 and 18 are formed in a drain region 2 and a source region 3. Therefore, after the photoresist 14 is removed, a heat treatment is carried out at 600 deg.C in a nitrogen atmosphere to recover the damaged parts 17 and 18 in the drain region 2 and the source region 3 and then a drain electrode 7 and a source electrode 8 made of Al are formed.
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