| 摘要 |
A semiconductor device (1) in which a pellet (3) and external leads are connected by wires (6) made of aluminium containing a predetermined amount of impurity, the impurity being at least one of 0.05-3.0 weight % of iron and 0.05-3.0 weight % of palladium. Alternatively the impurities are at least one of 0.05-3.0 weight % of nickel, 0.05-3.0 weight % of iron and 0.05-3.0 weight % of palladium and at least one of 0.5-3.0 weight % of magnesium, 0.5-3.0 weight % of manganese and 0.5-3.0 weight % of silicon. By these choices, the corrosion resistance of the wire can be increased, the breaking strength of the wire can be enhanced, and the hardness of a ball portion formed at an end of the wire may be set at a predetermined value, preferably 35-45 Hv. <IMAGE> |
