| 摘要 |
PURPOSE:To miniaturize a contact hole by a method wherein a tantalum silicide film different in etching rate from silicon is used for a leadout line out of a diffusion layer and the other portions of the diffusion layer is formed by an oxide film formed by oxidation in dry oxygen. CONSTITUTION:A naturally formed oxide film on source.drain 82 and 83 provided on a substrate 1 is removed, a tantalum silicide (TaSi2) film 90 is deposited, to cover a portion of the source.drain 82 and 83 and an element isolating region 2. Oxidation is accomplished in a dry oxygen atmosphere, whereby oxide films 101-104 are grown to cover the surface of diffusion layers 81-84 with the tantalum silicide film 90 remaining not oxidized. In this design, the contact size may be miniaturized in a process of opening a contact for a leadout line. |
