发明名称 PATTERN FORMATION
摘要 PURPOSE:To contrive improvement in pattern formation characteristics by a method wherein the end part of a microscopic aperture part is formed on a photosensitivity resin film using a different photomask and irradiating sensitizing light twice or more times. CONSTITUTION:Sensitizing light X is made to irradiate on resin films 2 and 4 through the first photomask 5, and the quantity of irradiation light is brought to the minimum with which a pattern can be formed on the photosensitive resin film 4 in the upper layer part of three-layer structure. Then, for the different pattern, the final pattern in other words, light Y with which a pattern can be formed is irradiated on the lower layer film 2 of the three-layer structure through the second photomask 7 having the pattern which does not have a photomask. Then, after the photosensitive resin film 4 of the upper layer part and the intermediate layer 3 have been removed, the photosensitive resin film 2 of the lower layer part is developed, and the pattern in which two kinds of photomasks 5 and 7 are composed, is formed. As a result, a microscopic pattern of the degree of resolution higher than that of the optical system of the irradiation light, can be formed.
申请公布号 JPS63271925(A) 申请公布日期 1988.11.09
申请号 JP19870105114 申请日期 1987.04.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TSUJI KAZUHIKO;SASAKO MASARU;ENDO MASATAKA
分类号 H01L21/027;G03C1/00;G03F7/00;G03F7/095;G03F7/20;H01L21/30 主分类号 H01L21/027
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