| 摘要 |
PURPOSE:To make it possible to conduct an excellent vapor growth epitaxial method by a method wherein a heating means, for the light entrance window such as the irradiation of the laser beam of the wavelength which can be absorbed by the substance constituting the light entrance window, is provided on the title equipment. CONSTITUTION:A means with which the laser beam 11, having the wavelength which can be absorbed by the substance constituting a light entrance window 8, can be made to irradiate on the light entrance window 8 is provided in a crystal growth chamber 1. Also in this case, a water-cooling jacket 12 is provided at the part other than the light entrance window 8 for the purpose of preventing the heating of the entire crystal growth chamber 1 by the conduction of heat from the light-entrance window 8. At this point, when the light-entrance window 8 is heated up, the raw gas on which a decomposing reaction is generated by light or heat in the vicinity of the light-entrance window, is reevaporated without adhering to the light-entrance window. As a result, the quantity of the light 10 projected to a substrate 7 becomes constant, and the epitaxial growth which is homogenous in the direction of the growing film thickness and having excellent reproducibility can be made possible.
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