| 摘要 |
PURPOSE:To improve the dry etching resistance of the titled material, without injuring the sensitivity of alpha-cyanoacrylate against radiation by crosslinking the homopolymer or the copolymer of the crosslinkable alpha-cyanoacrylate before or after irradiating the radiation. CONSTITUTION:The titled material comprises the homopolymer of the crosslinkable alpha-cyanoacrylate or the copolymer composed from two or more kinds of said monomers or the copolymer of one or more kinds of said monomers and one or more kinds of a noncrosslinkable alpha-cyanoacrylate as a main component. The crosslinkable alpha-cyanoacrylate is exemplified by 2- methoxyethyl alpha-cyanoacrylate or 2-hydroxylethyl alpha-cyanoacrylate and the noncrosslinkable monomer is exemplified by methyl alpha-cyanoacrylate or ethyl alpha-cyanoacrylate, etc. Thus, the dry etching resistance of the material is improved holding the excellent sensitivity and resolution, without injuring the sensitivity of the positive type resist of the alpha-cyanoacrylate having less dry etching resistance. |
