| 摘要 |
PURPOSE:To improve an element in reliability and stability by a method wherein amorphous silicon carbide is built up as an insulating layer on silicon carbide single-crystal and an electrode formed of a metallic thin film is constructed thereon. CONSTITUTION:A silicon carbide single-crystal 2 is formed on a silicon substrate 1 through a CVD method and an amorphous silicon carbide 3 to be as an insulating film is built thereon through a plasma CVD method. And, a metallic electrode 4 formed of aluminum is built on the silicon carbide 3 through vacuum metallizing, so that a metal insulator semiconductor (MIS) structure is formed. As concerns the MIS structure, amorphous silicon carbide is excellent in electrical insulating property, the semiconductor layer 2 and the insulating layer 3 are composed of the same silicon carbide and therefore the surface state desity is small. By these processes, an electrode element excellent in property can be obtained. |
