| 摘要 |
PURPOSE:To protect a metallic electrode section from heat generated from a resistance section by a method wherein an ohmic metallic electrode is rendered into contact with a low resistance section of a substrate which is apart from enough from a high resistance section of the substrate so as to restrian the temperature of the ohmic metallic electrode section from rising higher than 400 deg.C. CONSTITUTION:Electrode leading metals 4 and 5 and a resistance metal plating 6 are built on either end of a sheet resistance 2b of which the inside is formed larger as compared with a semiconductor resistance layer 2a. And, the distance between an effective high resistance section 10 and the ohmic metals 4-6 and 8 is set large enough to alleviate the effect of the temperature rise due to the heat generated from the semiconductor resistance layer 2a so as to restrain the temperature of the ohmic metal 4-6 and 8 from rising higher than 400 deg.C. By these processes, the breakdown electrostatic voltage against a resistance rises, and therefore a resistance high in reliability can be obtained.
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