发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent such erroneous operations as cross talk by a method wherein an insulating layer wherein a coverage is provided on a wiring layer containing a plurality of leads formed on an insulating substrate, and a conducting layer formed on the insulating layer and to be connected to the ground potential, are provided. CONSTITUTION:A conducting layer 15 is provided through the intermediary of an insulating layer 14 on a wiring layer 8 formed on an insulating substrate 1, and the conducting layer 15 is set at the ground potential. The conducting layer 15 is so formed as to cover all the lines 8' of the wiring layer 8, and the gaps between the lines 8' are filled up with an insulating layer of high permittivity. As the results, the coupling force is relatively weakened between the leads 8' and fluctuation in potential attributable to adjacent lines 8' may be reduced. Such erroneous operations as cross talk is reduced in a device with its wirings highly integrated.
申请公布号 JPS63271960(A) 申请公布日期 1988.11.09
申请号 JP19870105199 申请日期 1987.04.28
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MAEDA TAKAO;YAMANAKA SEISAKU;IGARASHI TADASHI
分类号 H01L23/28 主分类号 H01L23/28
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