| 摘要 |
PURPOSE:To improve on the step covering feature in the vicinity of a contact hole in an upper wiring layer by a method wherein a reflection stopping film is formed on an interlayer insulating film and the former is quicker than the latter in responding to etching. CONSTITUTION:A wiring layer 4, interlayer insulating film 5, and reflection preventing film 6 are formed, in that order, on an insulating layer 3 formed on a substrate 1. The reflection preventing film 6 is quicker than the interlayer insulating film 5 in responding to etching. A resist layer 7 to serve as a mask is formed on the reflection preventing layer 6, isotropic etching is accomplished for the formation of tapering between the reflection preventing film 6 and interlayer insulating film 5, and then anisotropic etching is performed for the formation of a contact hole 14 in the interlayer insulating film 5. The resist layer 7 is removed, and then an wiring layer 15 is formed on the interlayer insulating film 5. This design improves on the coverage to be provided by an upper layer wiring on a step 2 in the contact hole region.
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