| 摘要 |
PURPOSE:To produce a low iron loss and grain oriented silicon steel sheet having no deterioration of characteristic by stress relief annealing under good repeatability, by locally implanting the specific element on surface of the steel sheet by ion implantation after secondary recristallized annealing. CONSTITUTION:Cold rolling inserting intermediate annealing is executed to the silicon contained hot rolled steel sheet, to come to the finished sheet thickness, and decarburization, primary recrystallization annealing and next secondary recrystallization annealing are executed. by the ion implantation to this steel sheet surface, one or more of elements among He, Be, B, C, N, O, Ne, Na, Si, P, S, Ar, K, V, Cr, Ni, Cu, Ge, As, Kr, Nb and Mo, are locally implanted, to form local different phase zone on the surface layer of matrix in the steel sheet. After that, purifying annealing is executed. Ion beam energy intensity EB (KeV) at the time of ion implantation, is desirable to satisfy the relation EB>=300d in accordance with the thickness (d) of the oxide on the steel sheet surface. |
