| 摘要 |
PURPOSE:To enable preparation of a silicon carbide single crystal having excellent crystallinity with reduced internal stress, by using a silicon single crystal substrate having a flat surface and stepped parts or unevennesses formed thereon as a growth substrate. CONSTITUTION:The crystal growth surface of a silicon single crystal substrate 15 used as a supporting substrate having the surface set at (111) for growing a crystal is etched by a reactive ion etching method using flon gas and O2 gas. The surface is locally etched so as to provide flat bottoms at about 3mu depth using Al 16 provided in parallel on the above-mentioned surface as a mask to afford a substrate 14 for growing a silicon carbide single crystal. A silicon carbide single crystal film 17 is then grown on the substrate 14 by a chemical vapor deposition (CVD) method. Since the crystal film 17 is divided and grown according to the uneven shape, internal stress caused by thermal stress, etc., is suppressed and the aimed single crystal of good quality is obtained.
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