发明名称 |
Block electrically erasable EEPROM |
摘要 |
An electrically programmable, electrically erasable semiconductor memory apparatus for storing information in which the equivalent of a floating gate memory device and a select transistor device are combined in a single device cell is disclosed. A single control gate both controls a select transistor and is used in programming the floating gate.
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申请公布号 |
US4783766(A) |
申请公布日期 |
1988.11.08 |
申请号 |
US19860869207 |
申请日期 |
1986.05.30 |
申请人 |
SEEQ TECHNOLOGY, INC. |
发明人 |
SAMACHISA, GHEORGHE;SMARANDOIU, GEORGE;SU, CHIEN-SHENG;WONG, TING-WAH |
分类号 |
H01L27/112;G11C16/16;H01L21/8246;H01L21/8247;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):G11C11/34 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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