| 摘要 |
PURPOSE:To prevent the occurrence of damage due to secondary electrons and secondary ions on a thin film formed on a substrate surface, by interposing a lattice-like metallic sheet, etc., between a target and a substrate at the time of forming a target material in the form of a thin film on the substrate by a sputtering method. CONSTITUTION:In a vacuum chamber, a target 1 consisting of metals, oxides, etc., is attached to a holder 2, and a substrate 5 to be treated is disposed to the opposite position. A gas such as Ar is supplied into the vacuum chamber at low pressure, and a high voltage is impressed between the target holder 2 and a main body 3 of a reaction chamber surrounding the above by means of a high-frequency electric power source or DC power source 4 to carry out glow discharge, by which Ar gas is formed into plasmic state to sputter the target 1 and the resulting grains of the target material are deposited in the form of a thin film on the substrate 5. At this time, in order to prevent secondary electrons and secondary ions generated at the time of sputtering from impacting and breaking the thin film on the substrate 5, a reticular or bar-shaped metallic conductor 6 on which a positive voltage is impressed is interposed between the target 1 and the substrate 5 to trap the secondary electrons and secondary ions so as to prevent the above electrons and ions from impacting the thin film on the substrate.
|
