| 摘要 |
PURPOSE:To prevent the deposition of SiO2 and SiO on the inner wall surface of the title device and to form an SiO2 film from a gaseous reactant in good yield by moving a wafer to the position of the stationary wave of a microwave at the time of forming an SiO2 film on the Si wafer from the gaseous reactant by the CVD method. CONSTITUTION:A sample holder 40 capable of being vertically moved by a driving shaft 42 is arranged in the bell jar 20 of a CVD device, the wafer 13 of Si, etc., is placed thereon, and a temp. sensor 48 is fixed in the hole provided in the sample holder 40. The gaseous reactants such as SiH4 and O2 are supplied into the bell jar 20 from gas inlet pipes 22 and 24, and a microwave is radiated on the wafer 13 from a microwave oscillator 32. In this case, the sample holder 40 is vertically moved to position the stationary wave of the microwave at the wafer 13 while adjusting the position of the sample holder 40 based on the temp. measured by the temp. sensor 48. The gaseous reactants supplied in the bell jar react efficiently with each other to form an SiO2 film on the wafer, and the deposition of the formed SiO2 and SiO on the inner wall surface of the bell jar is prevented.
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