| 摘要 |
A semiconductor device in a CMOS gate array in which a basic cell has inputs by the number of n, wherein the basic cell comprises 2n PMOS transistors and 2r NMOS transistors is disclosed. The basic cell comprises, in a same basic cell, MOS transistors having at least two gate electrodes connected in common and MOS transistors operated on one gate electrode, and a logic circuit is formed by transistors of different gate width.
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