| 摘要 |
<p>PURPOSE:To prevent the deterioration in the thermal-decomposition velocity of a gallium compound, by subjecting a gallium-bearing material containing GaAs or GaP to vacuum thermal decomposition and by agitating the resulting liquid gallium so as to accelerate the volatilization of As or P contained in the above. CONSTITUTION:In vacuum decomposition vessel (a), a gallium-bearing material containing GaAs and/or GaP in heated by means of a heating furnace 13 to undergo vacuum thermal decomposition. The resulting liquid gallium 9 is taken out of the vessel bottom via a liquid gallium-drawing-out tube 10, while gaseous As and/or P is introduced via a transport tube (c) into a vacuum recovery vessel (b), which is solidified by cooling and recovered. In the vacuum thermal decomposition method for the above-mentioned gallium-containing material, an inert gas is introduced from a tube 50 into the above-mentioned liquid gallium-drawing-out tube 10 to agitate the liquid-gallium phase 9. By this procedure, the diffusion of the contained As and/or P into a vapor phase is accelerated. As a result, the deterioration in the thermal- decomposition velocity of GaAs, GaP, etc., is prevented and thermal decomposition is carried out with high efficiency to form liquid gallium and As, P and the like.</p> |
