| 摘要 |
PURPOSE:To optimize thermal environment in synthetic reaction and uniformly initiate the reaction, by using a heater divided into plural parts, controlling power and temperature of the respective heaters and changing the position of a crucible in directly synthesizing a raw material for compound semiconductors in the crucible. CONSTITUTION:A Ga raw material 3, As raw material 4 and liquid encapsulating agent 5 are charged into a crucible 2 held in a high pressure-resistant chamber vessel 1. Annular divided upper heater 6 and lower heater 7 provided on the outer periphery of the crucible 2 are used to heat the interior of the crucible 2. In the process, power or temperature of the heaters 6 and 7 is respectively independently or subordinately controlled by a heater controller 8. The position of the crucible 2 is simultaneously changed near the heaters 6 and 7 using a lower axis driving device 9. Thereby thermal environment in synthetic reaction of a raw material for producing compound semiconductor crystals can be optimized.
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