| 摘要 |
PURPOSE:To obtain the light-emitting diode of structure, in which a thick active layer effective for reducing nonlinearity on performance characteristics is obtained easily, by forming electrode structure for injecting currents to a section positioned at the upper section of the band-shaped groove of a second semiconductor layer formed on a first conduction type semiconductor substrate with a groove and a circular light-emitting region section. CONSTITUTION:The diode is constituted by a buffer layer 2 in 2mum thickness, a light-emitting region section 3a in 4mum thickness, a clad layer 4 in 1mum thickness, the semiconductor crystalline section of an electrode forming layer 5 in 0.5mum thickness and a P-side electrode 6 and N-side electrodes 9 formed on the semiconductor substrate 1 with groove 1a of 20mum width and 4mum depth in succession through a liquid epitaxial growth method. In this instance, the electrode forming layer 5 is formed by a conduction-type N type, and a current injection electrode section 5a is formed by selectively diffusing Zn. The growing surface of the active layer 3 is flattened approximately because the comparatively shallow groove 1a is used. An advantage on liquid epitaxial growth is also obtained by the effect of the groove 1a at that time. |
