| 摘要 |
PURPOSE:To enable production of a whisker close to a perfect crystal at a low temperature with hardly and dislocation or laminate defects, by growing the whisker in the coexistence of an additive containing Ti and a compound thereof. CONSTITUTION:An SiC whisker is grown by a sublimation recrystallization and vapor methods, etc. In the process, an additive containing metallic Ti or a compound thereof or both are used. For example, beta-type SiC powder having <=1mu particles diameter for firing is weighed and mixed with metallic Ti having 200 mesh particle diameter and metallic A powder having 200 mesh particle diameter so as to provide 78:21:1 weight ratio and 10g total amount. Disodium tetraborate in an amount of 1g is added to the resultant mixture and then blended by a wet blending method using hexane and a ball mill. The obtained blend is subsequently dried and placed in a BN crucible and heated at 1,800 deg.C in an atmosphere of Ar under 1atm.
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