| 摘要 |
PURPOSE:To control the generation of foreign matter and to form a film having uniform thickness by independently controlling the temps. of the metallic soaking plate for holding a wafer to be treated and the part of an insulating cover at the periphery of the plate in the title plasma CVD device. CONSTITUTION:In the plasma CVD device 1, a susceptor 60 having heating means 63 and 70 is arranged on the metallic soaking plate 61 for carrying the film forming wafer 100 and on the insulating cover 62 provided at the periphery of the plate 61 in a housing 10. A film forming gaseous reactant is supplied to the housing 10 from a gaseous reactant passages 55, a glow discharge is generated in a high-frequency electrode 51 having many holes by a high-frequency power source 57, and the CVD film of the gaseous reactant is formed on the surface of the wafer on the soaking plate 61. In this case, the temp. of the soaking plate 61 is made lower than that of the insulating cover 62 at the periphery of the plate 61, hence the deposition of the reaction product on the insulating cover is effectively prevented, and a film having uniform thickness is formed on the wafer.
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