发明名称 |
VAPOR DEPOSITION DEVICE FOR GROWING THIN FILM |
摘要 |
PURPOSE:To easily form a high-quality vapor deposition film by controlling the temp. of a crucible put an organic compd. therein quickly and accurately in the case of vapor-depositing the organic compd. in a gaseous phase on the surface of a substrate. CONSTITUTION:In the case of growing the thin film of an organic compd. such as diacetylene monomer liable to be decomposed at low temp. in a gaseous phase on the surface of a glass substrate 21 in a vapor deposition device main body 29, the inside of a vacuum chamber 24 is firstly exhausted and vacuumized with an exhaust system 25. A crucible 7 put vapor depositing material (diacetylene monomer) 11 therein of a vapor deposition device main body 8 is heated by sending a heating medium 15 of silicon oil at 160 deg.C incorporated in a heating medium tank 17 to a circulating passage 10 of the heating medium provided to the outer periphery of the crucible 7 with a pump 19. When diacetylene monomer 11 put in the crucible is evaporated and the thin film is formed on the surface of the substrate 21, the crucible 7 is quenched by sending water used as a refrigerant at about 15 deg.C incorporated in a cooling tank 18 to a circulating passage 9 of the refrigerant with a pump 20. The thin film of the organic compd. having high vapor pressure and being liable to be decomposed is formed with high quality without changing the component.
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申请公布号 |
JPS63270456(A) |
申请公布日期 |
1988.11.08 |
申请号 |
JP19870102055 |
申请日期 |
1987.04.27 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TOMARU AKIRA;MAEBOTOKE SAKAE;SHIBUKAWA ATSUSHI |
分类号 |
H01L21/203;C23C14/24 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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