发明名称 VAPOR DEPOSITION DEVICE FOR GROWING THIN FILM
摘要 PURPOSE:To easily form a high-quality vapor deposition film by controlling the temp. of a crucible put an organic compd. therein quickly and accurately in the case of vapor-depositing the organic compd. in a gaseous phase on the surface of a substrate. CONSTITUTION:In the case of growing the thin film of an organic compd. such as diacetylene monomer liable to be decomposed at low temp. in a gaseous phase on the surface of a glass substrate 21 in a vapor deposition device main body 29, the inside of a vacuum chamber 24 is firstly exhausted and vacuumized with an exhaust system 25. A crucible 7 put vapor depositing material (diacetylene monomer) 11 therein of a vapor deposition device main body 8 is heated by sending a heating medium 15 of silicon oil at 160 deg.C incorporated in a heating medium tank 17 to a circulating passage 10 of the heating medium provided to the outer periphery of the crucible 7 with a pump 19. When diacetylene monomer 11 put in the crucible is evaporated and the thin film is formed on the surface of the substrate 21, the crucible 7 is quenched by sending water used as a refrigerant at about 15 deg.C incorporated in a cooling tank 18 to a circulating passage 9 of the refrigerant with a pump 20. The thin film of the organic compd. having high vapor pressure and being liable to be decomposed is formed with high quality without changing the component.
申请公布号 JPS63270456(A) 申请公布日期 1988.11.08
申请号 JP19870102055 申请日期 1987.04.27
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TOMARU AKIRA;MAEBOTOKE SAKAE;SHIBUKAWA ATSUSHI
分类号 H01L21/203;C23C14/24 主分类号 H01L21/203
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