| 摘要 |
PURPOSE:To reduce the astigmatism at a low threshold value and to enhance the reliability by a method wherein, when a liquid-phase epitaxial growth operation is executed again, a gallium arsenide anti-oxidizing layer is melted back and removed completely. CONSTITUTION:After a silicon oxide mask 2 has been removed by using HF, an n-type aluminum gallium arsenide clad layer 5 with an aluminum constituent of 0.41 is grown again by a liquid-phase epitaxial growth operation. During this process, a gallium arsenide anti-oxidizing layer 4 which has been grown during a first operation with an unsaturation degree of 1 deg.C is melted back; after that, a groove is filled completely. A layer thickness at a shoulder part of the groove is about 0.2 mum. In succession, a p-type aluminum gallium arsenide active layer 6 with an aluminum constituent of 0.08 and a thickness of 700 rho, a p-type aluminum gallium arsenide clad layer 7 with an aluminum constituent of 0.41 and a thickness of 1 mum and a p-type gallium arsenide cap layer 8 with a thickness of about 3 mum to make an ohmic contact are grown. After that, electrodes are arranged on the whole surface of both p- and n- semiconductors and a laser device is formed. By this setup, a complete transverse- direction actual refractive-index wave guide mechanism can be obtained without exposing an aluminum gallium arsenide current-constricting layer.
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