| 摘要 |
PURPOSE:To form a gate oxide film, at a low temperature, whose interface state and film quality are good on a channel region with excellent crystallinity by a method wherein an epitaxial growth process to form the channel region and a CVD process to form the gate oxide film are executed in succession in an identical growth chamber. CONSTITUTION:After a pad oxide film 2 and a silicon nitride film 4 have been formed on a substrate 1, an etching process is executed and the assembly is placed inside a growth chamber. It is confirmed that, when a gas is not introduced, a degree of vacuum inside the growth chamber is less than 1X10<-6> Pa; a channel region is first formed by using an epitaxial growth method. At a stage that a single crystal of a desired film thickness is grown, the introduction of hydrogen out of gases used for the epitaxial growth is stopped. As an alternative, nitrous oxide (N2O) is introduced; at when from a CVD process to form a gate oxide film is executed by using dichlorosilane and nitrous oxide. By this setup, an epitaxial growth layer 5 and the gate oxide film 6 are formed in succession. The substrate is set at a temperature below 850 deg.C.
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