| 摘要 |
PURPOSE:To produce the apparatus relating to the beam head in the caption with a compact size and high accuracy by providing in one body an electron beam generator and an electron beam detecting means on one board. CONSTITUTION:When an electron beam head is applied to exposure of a semiconductor wafer, a wafer WF including a semiconductor is exposed by an electron beam EB radiated from an electron beam generator BG. A single board MB provided with at least one electron beam generator BG is employed. Then, a wafer mark WM is detected on a head board MB side. That is, when the electron beam EB is radiated from the electron beam generator BG toward the wafer mark WM, secondary electrons or reflected electrons 2E are generated from the wafer WF and received by a sensor formed in one body on the board MB side, such as P/N junction PN, then the wafer mark WM is detected. Accordingly, the apparatus relating to beam head in the caption can be produced in a compact size and high accuracy.
|
