发明名称 LEVEL SHIFT CIRCUIT
摘要 PURPOSE:To expand the operational be temperature range of the electronic circuit by using a current source circuit deciding a current flowing through a level shift resistor depending on the combination of the 2nd transistor (TR) whose temperature drift is known and a resistive element with no temperature drift caused therefrom as the current source. CONSTITUTION:A base of a TR 30 is biased to a prescribed level VB and (n-1)- stage of diodes or TRs of diode connection are connected in series with the emitter of the said TR 30, where (n) is a natural number. In expressing a potential difference between a potential VE of a connecting point of a resistor 29 and diodes connected in series (or TRs of diode connection) and the prescribed potential VB as nVBE, since the temperature drift is caused due to the voltage VBE only and the temperature drift of the other components R1, R2, RE, VCC or the like is considered to be negligible, the level shift is set independently of the temperature drift by the components R1, R2 and the power supply VCC. The temperature drift of the level shift is set independently by the number (n) and the component RE.
申请公布号 JPS63268302(A) 申请公布日期 1988.11.07
申请号 JP19870101909 申请日期 1987.04.27
申请人 HITACHI LTD 发明人 SANO YUJI;OSAWA MICHITAKA
分类号 H03F3/34;H03F3/50;H03K5/00;H03K5/003;H03K19/018 主分类号 H03F3/34
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