| 摘要 |
PURPOSE:To flatten microscopic uneven parts without causing electrical unstability by a method wherein, after an adsorption layer of a substance having a photosensitizing action has been formed on the surface of a first thin film, a second thin film is formed. CONSTITUTION:A gas of He is passed through a mercury vaporizer whose temperature is always controlled at about 50 deg.C; a mercury vapor is fed to an adsorption chamber 4; a substrate 1 is exposed to the mercury vapor for several minutes; a mercury molecule adsorption layer 3 is formed on an SiO2 film 2 formed in a previous process. Then, an Al pattern 6 is formed on the adsorption layer 3 by using an ordinary photolithographic process. In succession, the substrate 1 is set in a CVD chamber 7; a raw material gas is introduced; the SiO2 film is processed by a CVD method while it is irradiated with the light from a mercury lamp 8. During this process, a heater 10 is kept at a temperature which does not cause thermal CVD. Because a photochemically sensitizing reaction is caused by Hg on the SiO2 film 2 as an recessed part, the raw material gas is decomposed and a film is formed; the photochemically sensitizing reaction is not caused on the Al pattern as a protruding part; accordingly, it is possible to flatten microscopic uneven parts of the submicron order.
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