| 摘要 |
PURPOSE:To improve degree of integration, by providing a first input terminal by connecting load to the collector and the emitter of a resonant tunnel transistor in series and also, connecting a resistor to the base, and a second input terminal by connecting the resistor to the base, respectively. CONSTITUTION:The titled device is equipped with a transistor (for example, a transistor Q) whose base current has a differential negative resistance characteristic and whose collector current increases after the appearance of the differential negative resistance characteristic, the load (for example, a resistor R4) connected to the collector and the emitter of the transistor Q, the first input terminal (for example, an input terminal to which an input signal In1 is impressed) formed by connecting the resistor (for example, a resistor R1) to the base of the transistor Q, and the second input terminal (for example, the input terminal to which an input signal In2 is impressed) by connecting the resistor (for example, a resistor R2) similarly. In such a way, it is possible to reduce the number of required active devices, and to improve the degree of integration in a semiconductor memory device. |
