| 摘要 |
PURPOSE:To operate the title transistor by modulating the level of tunnel current running from a metallic side to an n type semiconductor by a method wherein a metal is adopted in a feeding region of a transistor carrier to change the width of Schottky barrier formed on the interface between a metal and the n type semiconductor. CONSTITUTION:Figures 1, 2, 3 and 4 respectively represent a collector region on a GaAs substrate, a running region of electrons injected from an n<-> layer provided in contact with a base region, an n<+> GaAs layer 3 and an n<-> Ga1-xAlxAs layer 4 with the impurity density specified to be 1X10<14>-1X10<17>cm<-3>. A metallic emitter region 5 forms a Schottky junction with the n-Ga1-xAlxAs layer 4. Outer base regions 6, 6' of p<+>-GaAs change the Schottky barrier width by injecting holes into the front of Schottky junction. 7, 8, 8' and 9 respectively represent an emitter electrode, a base electrode, and a collector electrode. The electrodes 7, and 8, 8' are electrically insulated from one another by an insulating layer 10. In such a constitution, the concrete requirements to operate a device shall be the three points i.e. the height of Schottky barrier, the impurity concentration and thickness of n-GaAs layer 3 as well as the composition and thickness of n-Ga1-xAlxAs layer 4.
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