| 摘要 |
PURPOSE:To clean the inside of a device efficiently and prepare a silicon group film of good characteristics by cleaning the inside of a reaction chamber by means of plasma cleaning utilizing NF3 gas and carrying out subsequently plasma treatment of hydrogen gas. CONSTITUTION:When cleaning a reaction chamber forming a film such as film transistor or the like, nitrogen trifluoride is introduced into a reaction chamber 31 and high-frequency power is applied between an upper section electrode 32 and a lower section electrode 39 to generate glow discharge. NF3 gas is decomposed by said glow discharge and active F radical is formed to carry out etching, for instance, a hydrogenated amorphous silicon membrane adhered to the inner wall of the reaction chamber 31 and the electrodes 32 and 39. Then, adhered substances such as HF, F and the like formed by the etching in the previous stage can be removed by introducing hydrogen gas into the reaction chamber 31 and discharging out high-frequency power. |
