| 摘要 |
PURPOSE:To enable the aluminum wiring with fine wiring width dimension, by turning polycrystalline silicon into amorphous silicon, or making the crystal grain diameter sufficiently smaller than the wiring width, and making aluminum grow uniformly in the polycrystalline silicon. CONSTITUTION:In the active region of a semiconductor substrate 1, a gate oxide film 2 is formed with a thickness of, e.g., 100Angstrom a contact part is subjected to etching, and an N<+> region 3 is formed by applying the mask used in said etching. Polycrystalline silicon 4 is stuck with a thickness of 2000Angstrom , and element to turn the polycrystalline silicon into amorphous silicon, e.g., oxygen 5 is introduced. By etching the polycrystalline silicon 4, a wiring pattern is formed. By applying this wiring pattern to a mask, an N<-> region 6 is formed to constitute an LDD structure. An interlayer insulating film, e.g., an oxide film 7 is stuck with a thickness of 3000Angstrom to form a contact part. Aluminum 8 is stuck and subjected to etching to form a pattern. When a MOSFET formed in this manner is subjected to a heat-treating for about 10 hours at a temperature of 450 deg.C, aluminum diffuses uniformly into the polycrystalline silicon, and an aluminum wiring is formed. |
