DOUBLE HETEROSTRUCTURE LIGHT-EMITTING SEMICONDUCTOR DEVICE

摘要

A double heterostructure light-emitting semi-conductor device includes a p-GaAs substrate having a first electrode formed on one surface and a current confining layer on the other surface; a confined current conduction layer; and a light-emitting layer structure formed on the current confining layer and the confined current conduction layer. A capping layer of GaAs having a second electrode is formed on the light-emitting layer structure. A light exit window layer for exiting the emitted light is constructed by a thin film of the capping layer.