| 摘要 |
PURPOSE:To improve the corrosion resistance of a Cu lead wirings and to obtain a resin-sealed semiconductor device having excellent moisture resistance reliability by bonding a semiconductor element to a lead frame by the Cu-lead wirings, and then covering the surfaces of the wirings with a film having high bondability to resin and base metal Cu and high corrosion resistance protection. CONSTITUTION:A primary electrode 2 made of Fe-42Ni alloy or partly plated with Ag on a Cu alloy lead frame 1 and a secondary aluminum electrode 5 on a semiconductor element 4 die bonded on a tab 3 are wire bonded by Cu-lead wirings 6 in a reduced atmosphere. Then, it is oxidized in argon gas. Further, it is dipped in an isopropyl alcohol which contains benzotriazole to form a compound film 7 on the Cu wire surface. A semiconductor device is manufactured by sealing it treated as above with sealing resin 8 made of epoxy resin. Thus, the bondability of the wiring to the resin is enhanced to prevent moisture from invading externally into the device and to further improve the corrosion resistance of the wirings. |
