| 摘要 |
<p>PURPOSE:To read-out it at high speed by providing a latch circuit having a function, which holds a storage information, read out from an information storage part, and transmits the held information to an external terminal, as being in an operating state independently of the information storage part, according to a control signal supplied from the external terminal. CONSTITUTION:A first address signal to be supplied at the time of a read-out operation, and the first address signal corresponding to a data held in the latch circuit FF are compared, and if they are the same addresses, a second address signal to designate respective semiconductor memory devices M0-M31 is decoded, and a read-out signal is transmitted after designating the latch circuit FF, stored in the semiconductor memory devices M0-M31. If they are the different addresses, storage parts RAM in all the semiconductor memory devices are accessed by the first address signal, and the read-out signal is transferred to the latch circuits FF respectively. Then, the second address signal is decoded, and the read-out signal is outputted from the latch circuit FF, stored in the semiconductor memory devices M0-M31, and at the same time, the first address signal at that time is fetched in an address storage circuit. Thus, an operating speed can be improved.</p> |
