Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor.

摘要

A process for fabricating a bipolar transistor structure having device and isolation regions fully self-aligned. The transistor is fabricated using a process wherein collector (12), base (14) and emitter (16) layers are sequentially formed on a semiconductor substrate (10) by a molecular beam epitaxy technique. The emitter layer is covered by insulation layers and a photoresist layer is then formed on the insulation layer. The photoresist layer is masked, exposed and developed to provide a pattern which is used as an etch mask to form both the device emitter area (26) and isolation areas (28). The isolation areas (28), the emitter region (26) and the base (14) and collector (12) regions are therefore formed.