| 摘要 |
PURPOSE:To inhibit the generation of OFF currents flowing between a source and a drain when natural light or light by a fluorescent lamp is projected, and to prevent the undesired ON operation of the FET under an OFF state by using amorphous silicon, the peak value of absorption wavelength beams therefrom is kept within a specific range, as a semiconductor layer. CONSTITUTION:Amorphous silicon, the peak value of absorption beam wavelength thereof is kept within a range of approximately 0.45mum or less or within a range of approximately 0.60mum or more, is used as the semiconductor layer. Amorphous silicon with a maximum absorption beam wavelength of approximately 0.45mum is obtained by reducing its growth rate or is also obtained by adding nitrogen N to silicon as an impurity. An amorphous silicon material, the peak value of absorption beam wavelength thereof is positioned in approximately 0.60mum, is obtained by adding germanium (Ge) or tin Sn to silicon. |
