| 摘要 |
PURPOSE:To grow III-V compound semiconductor crystal of high purity with good controllability and reproducibility by employing as carrier gas of hydrochloride to be reacted with group III element material one or more types of inert gases or one or more types of mixture gas of inert gas and hydrogen gas. CONSTITUTION:Inert gas like nitrogen gas is used instead of hydrogen as carrier gas of hydrochloride to be introduced from a second gas inlet tube 3. Main reaction in a Ga containing boat is represented by Ga+HCL GaCl+1/2H2. The lower the hydrogen partial pressure in an atmosphere is, the greater the reaction is advanced rightside, i.e., in a direction for reducing unreacted hydrochloride. Accordingly, when inert gas is used as the carrier gas of hydrogen chloride gas, the reaction of Ga with the hydrochloride can be conducted in a state that hydrogen partial pressure is low, thereby reducing unreacted hydrochloride. Therefore, when the inert gas is used, the unreacted hydrochloride transported to the vicinity of a substrate without reacting with Ga is reduced in a Ga containing boat, and a GaAs layer of high purity is grown on the substrate.
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