FORMATION OF SINGLE CRYSTALLINE SILICON LAYER ON INSULATED LAYER OF SILICON SUBSTRATE

摘要

PURPOSE:To contrive shortening of a process and prevention of deterioration of a silicon substrate and to enable formation of large crystal particles without excessively raising cooling velocity by dropping melted silicon on the silicon substrate provided with a small hole to an insulated layer thereof and forming a single crystalline layer while keeping the small hole part as a nucleus. CONSTITUTION:An insulated oxidation layer 6 such as SiO2 is provided on an Si substrate 5 formed with e.g. LSI devices 4... and a small hole 7 is provided to the insulated layer positioned between the devices 4... with technique such as photolithography. Then while rotating the substrate 5 by means of a turntable or the like, melted silicon is dropped desirably toward the small hole 7. The melted silicon is fluidized and developed in the circumferential direction by centrifugal force and slowly cooled. At this time, melted silicon is brought into contact with the substrate 5 in the part of the small hole 7 and made to a small projection 7' of melted silicon therein and therefore its heat capacity is made small and it is firstly cooled and the nucleus of crystal is formed. Thereafter single crystal is grown in the circumferential direction (shown in arrows) from this nucleus and a single crystalline silicon layer 8 is formed on the insulated layer 6.