发明名称 |
Vertical ballistic transistor. |
摘要 |
<p>A vertical ballistic transistor (50) is described. Base metallic contacts (160) of reliable thickness are deposited on a carrier depletable layer (101) and diffuse into the base (120). A depletion region (200) forms in the depletable layer (101). The depletion region electrically isolates the base contact (160) from the emitter (103). The thickness of the depletable layer (101) prevents the generation of usual depletion regions in the base (120) that tend to cut off base current.</p> |
申请公布号 |
EP0288712(A1) |
申请公布日期 |
1988.11.02 |
申请号 |
EP19880104097 |
申请日期 |
1988.03.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEIBLUM, MORDEHAI;KNOEDLER, CHRISTINA MARIE;THOMAS, DAVID CHARLES |
分类号 |
H01L29/423;H01L29/68;H01L29/06;H01L29/205;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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