| 摘要 |
PURPOSE:To obtain an inexpensive ITO film easy of oxidizability control, by repeating a process in which a metallic film of In/Sn formed by means of sputtering is oxidized by an oxygen radical method plural times. CONSTITUTION:In a film-forming chamber equipped with a metallic target of In/Sn, a metallic layer of In/Sn is formed on a substrate by sputtering. Subsequently, the above-mentioned substrate is moved into an oxidizing chamber fitted with an oxygen radical injection equipment, where the above-mentioned metallic layer is oxidized by a radical oxidation process into an ITO film. Then, the above process is repeated a required number of times.
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