| 摘要 |
A photovoltaic device comprises a transparent front electrode, an amorphous semiconductor film containing at least one p-i-n junction and a metallic back electrode, wherein the n-layer neighboring on the back electrode includes at least one first type sub-layer of an alloyed amorphous silicon which contains not only hydrogen and a dopant for n-conductivity type but also at least one element selected from nitrogen, oxygen and carbon, and at least one second type sub-layer of an amorphous silicon which contains hydrogen and a dopant for n conductivity type.
|
