| 摘要 |
PURPOSE:To facilitate fine processing while securing transparency, low resistance, and chemical stability by performing a reduction process in a hydrogen plasma atmosphere beforehand on only a removed part of a transparent conductive metal oxide film so that the transparent conductive metal oxide layer on the part, where the reduction process is performed, is selectively removed to form a pattern. CONSTITUTION:In the case of a photosensor element in which amorphous silicon is used, for example, a prescribed resist pattern 100 is formed and a substrate 11 on which a film 12 and a resist pattern 100 are formed is disposed in a capacitive coupling type parallel flat plate high-frequency discharge device, and hydrogen plasma is used to reduce a part to be removed in the film 12. When etching is performed thereafter, an ITO film's part not covered with the resist pattern 100 is easily removed, so that an ITO film's part covered with the resist pattern 100 is maintained in its good quality. Accordingly a remaining transparent electrode part satisfies transparency, low resistance, chemical stability, and it is processed finely.
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