Transistor having integrated stabilizing resistor and method of making thereof

摘要

A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within a base region. A floating emitter region surrounds the ordinary emitter region. An elongated stabilizing resistive region has one end connected to the ordinary emitter region and the other to the base region. The protection region is positioned around, but spaced from, an end portion of the stabilizing resistive region only in the area where the resistive region connects to the ordinary emitter region.