| 摘要 |
PURPOSE:To heat even a sufficiently thin thin-film formed onto a transparent substrate selectively at a fixed temperature by adhesively or adjacently arranging a transparent substrate with a second thin-film absorbing light energy and generating heat to the transparent substrate with the first thin-film and heating the second thin-film by the irradiation of light energy while heating the first thin-film by thermal radiation from the second thin-film. CONSTITUTION:A transparent substrate 10 with a second thin-film pattern 9 having approximately the same shape as a first thin-film pattern 7 requiring heating in first thin-film patterns is opposed and disposed to a transparent substrate 6 with the first thin-film pattern. Infrared rays 11 are applied from the upper side or lower side of the transparent substrate and the thin-film pattern is heated. A second thin-film is formed thickly so that light is absorbed sufficiently and the temperature of the second thin-film is not lowered by heat dissipation to the transparent substrate 10. When such heat treatment is executed in an oxygen atmosphere, the oxide film of the first thin-film can be shaped. Accordingly, a semiconductor device using a gallium arsenide compound, which is not suitable for high-temperature treatment a semiconductor device using an amorphous silicon thin-film, etc., and a device requiring high- temperature heat treatment can be formed onto the same transparent substrate without being limited by the order of processes.
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